Growth of the orthorhombic phase and inhibition of charge injection in ferroelectric HfO2-based MFIS memory devices with a high-permittivity dielectric seed layer

The poor endurance of the ferroelectric (FE) HfO2 (Fe-HfO2) material-based FE field-effect transistor (Fe-FET) remains a major challenge for its future commercial production. Here we propose high-? interface seed layer (SL) in metal-FE-insulator-semiconductor (MFIS) gate stack to address this issue. We fabricated Hf0.5Zr0.5O2 (HZO) thin films on various dielectric SLs, including ZrO2, HfO2, (HfO2)0.75(Al2O3)0.25 (HAO), and Al2O3, investigated their microstructures, ferroelectricity, memory characteristics MFIS devices. results show that nucleation growth orthorhombic phase HZO are affected not only by surface energy but also microstructure SL. Additionally, clarified role SL devices, which were reasonably explained accurately calculated electric field. Finally, realized good tradeoff between polarization charge injection device with HAO SL, demonstrating large window (> 1.0 V), excellent retention 1.6×104 s), cycles 105). will provide valuable ideas overcome Fe-HfO2-based FeFET contribute developing other high-performance electron devices Fe-HfO2 grown